2N6491G

Bipolar Junction Transistor by onsemi (120 more products)

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The 2N6491G from onsemi is a Complementary Silicon PNP Transistor that has been designed for use in general-purpose amplifiers and switching applications. It has a collector-emitter voltage of over 80 V, a base-emitter voltage of up to 5 V, and a collector-emitter saturation voltage of less than 1.3 V. This transistor has a continuous collector current of up to 15 A. It features a high DC current gain and high current gain-bandwidth product. This RoHS-compliant transistor is available in a plastic-encapsulated surface-mount package.

Product Specifications

Product Details

  • Part Number
    2N6491G
  • Manufacturer
    onsemi
  • Description
    80 V Complementary Silicon PNP Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    90 V
  • Collector Cut off Current
    1 to 5 mA
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    15 A
  • Gain Bandwidth Product
    5 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    75 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Application
    General - purpose amplifier and switching applications

Technical Documents

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