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2SA1416S-TD-E

Bipolar Junction Transistor by onsemi (120 more products)
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2SA1416S-TD-E Image

The 2SA1416S-TD-E from onsemi is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.85 to 1.2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 120 V, Collector Cut off Current 100 nA. Tags: Surface Mount, PNP Transistor. More details for 2SA1416S-TD-E can be seen below.

Product Specifications

Product Details

  • Part Number
    2SA1416S-TD-E
  • Manufacturer
    onsemi
  • Description
    100 V, 1 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.85 to 1.2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    2 A
  • DC Current Gain
    140 to 280
  • Gain Bandwidth Product
    120 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    500 mW
  • Output Capacitance
    8.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89

Technical Documents
View details on the manufacturer's website
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