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BC849B_R1_00001

Bipolar Junction Transistor by PANJIT Semiconductor (355 more products)
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BC849B_R1_00001 Image

The BC849B_R1_00001 from PANJIT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 0.7 to 0.9 V, Emitter Cut off Current 100 nA, Collector Base Voltage 30 V, Collector Cut off Current 0.015 to 5 µA. Tags: Surface Mount, NPN Transistor. More details for BC849B_R1_00001 can be seen below.

Product Specifications

Product Details

  • Part Number
    BC849B_R1_00001
  • Manufacturer
    PANJIT Semiconductor
  • Description
    30 V, 0.1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    0.7 to 0.9 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    30 V
  • Collector Cut off Current
    0.015 to 5 µA
  • Collector Emitter Breakdown Voltage
    30 V
  • Collector Emitter Voltage
    30 V
  • Continuous Collector Current
    0.1 A
  • Pulse Collector Current
    200 mA
  • DC Current Gain
    150 to 450
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    330 mW
  • Output Capacitance
    4.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    General purpose amplifier applications

Technical Documents
View details on the manufacturer's website
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