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MMBT2222AW_R2_00001

Bipolar Junction Transistor by PANJIT Semiconductor (355 more products)
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The MMBT2222AW_R2_00001 from PANJIT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 0.6 to 2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 75 V, Collector Cut off Current 10 µA. Tags: Surface Mount, NPN Transistor. More details for MMBT2222AW_R2_00001 can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBT2222AW_R2_00001
  • Manufacturer
    PANJIT Semiconductor
  • Description
    40 V, 0.6 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.6 to 2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    75 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    40 V
  • Collector Emitter Voltage
    40 V
  • Continuous Collector Current
    0.6 A
  • DC Current Gain
    100 to 300
  • Gain Bandwidth Product
    300 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    150 mW
  • Output Capacitance
    8 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Application
    General purpose amplifier applications

Technical Documents
View details on the manufacturer's website
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