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MMBTA06_R1_00001

Bipolar Junction Transistor by PANJIT Semiconductor (355 more products)
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MMBTA06_R1_00001 Image

The MMBTA06_R1_00001 from PANJIT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 4 V, Collector Base Voltage 80 V, Collector Cut off Current 0.1 µA, Collector Emitter Breakdown Voltage 80 V, Collector Emitter Voltage 80 V. Tags: Surface Mount, NPN Transistor. More details for MMBTA06_R1_00001 can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBTA06_R1_00001
  • Manufacturer
    PANJIT Semiconductor
  • Description
    80 V, 0.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    4 V
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    0.1 µA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    100
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    225 to 300 mW
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23

Technical Documents
View details on the manufacturer's website
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