BSS64AT116

Bipolar Junction Transistor by ROHM Semiconductor (346 more products)

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BSS64AT116 Image

The BSS64AT116 from ROHM Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 770 to 900 mV, Emitter Cut off Current 100 nA, Collector Base Voltage 120 V, Collector Cut off Current 0.1 to 50 µA. Tags: Surface Mount, NPN Transistor. More details for BSS64AT116 can be seen below.

Product Specifications

Product Details

  • Part Number
    BSS64AT116
  • Manufacturer
    ROHM Semiconductor
  • Description
    100 V, 0.1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    770 to 900 mV
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    0.1 to 50 µA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    0.1 A
  • Pulse Collector Current
    200 mA
  • DC Current Gain
    30
  • Gain Bandwidth Product
    140 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.2 to 0.35 W
  • Output Capacitance
    2.5 to 4 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    High Voltage Amplifier

Technical Documents

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