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QS5W1TR

Bipolar Junction Transistor by ROHM Semiconductor (346 more products)
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QS5W1TR Image

The QS5W1TR from ROHM Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Emitter Cut off Current 1 µA, Collector Base Voltage 30 V, Collector Cut off Current 1 µA, Collector Emitter Breakdown Voltage 30 V. Tags: Surface Mount, NPN Transistor. More details for QS5W1TR can be seen below.

Product Specifications

Product Details

  • Part Number
    QS5W1TR
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 3 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Emitter Cut off Current
    1 µA
  • Collector Base Voltage
    30 V
  • Collector Cut off Current
    1 µA
  • Collector Emitter Breakdown Voltage
    30 V
  • Collector Emitter Voltage
    30 V
  • Continuous Collector Current
    3 A
  • Pulse Collector Current
    6 A
  • DC Current Gain
    200 to 500
  • Gain Bandwidth Product
    270 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.5 to 1.25 W
  • Output Capacitance
    16 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-25T
  • Application
    Low Frequency Amplifier, Driver
  • Note
    Configuration:- Dual

Technical Documents
View details on the manufacturer's website
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