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2SD667A-B

Bipolar Junction Transistor by SeCoS Corporation (664 more products)
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2SD667A-B Image

The 2SD667A-B from SeCoS Corporation is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 10 µA, Collector Base Voltage 120 V, Collector Cut off Current 10 µA, Collector Emitter Breakdown Voltage 100 V. Tags: Through Hole, NPN Transistor. More details for 2SD667A-B can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD667A-B
  • Manufacturer
    SeCoS Corporation
  • Description
    100 V, 1000 mA, NPN Small Signal Bipolar Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    10 µA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    1000 mA
  • DC Current Gain
    60 to 120
  • Gain Bandwidth Product
    140 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    900 mW
  • Output Capacitance
    12 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92MOD
  • Application
    Low Frequency Power Amplifier

Technical Documents
View details on the manufacturer's website
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