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3DD13001-B

Bipolar Junction Transistor by SeCoS Corporation (664 more products)
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3DD13001-B Image

The 3DD13001-B from SeCoS Corporation is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1.2 V, Emitter Cut off Current 100 µA, Collector Base Voltage 600 V, Collector Cut off Current 100 µA. Tags: Through Hole, NPN Transistor. More details for 3DD13001-B can be seen below.

Product Specifications

Product Details

  • Part Number
    3DD13001-B
  • Manufacturer
    SeCoS Corporation
  • Description
    400 V, 200 mA, NPN Small Signal Bipolar Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1.2 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    600 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    400 V
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    200 mA
  • DC Current Gain
    20 to 26
  • Gain Bandwidth Product
    8 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    750 mW
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Application
    Power switching applications

Technical Documents
View details on the manufacturer's website
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