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3DD13002-C

Bipolar Junction Transistor by SeCoS Corporation (664 more products)
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3DD13002-C Image

The 3DD13002-C from SeCoS Corporation is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.1 V, Emitter Cut off Current 100 µA, Collector Base Voltage 600 V, Collector Cut off Current 100 µA. Tags: Through Hole, NPN Transistor. More details for 3DD13002-C can be seen below.

Product Specifications

Product Details

  • Part Number
    3DD13002-C
  • Manufacturer
    SeCoS Corporation
  • Description
    500 V, 800 mA, NPN Small Signal Bipolar Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.1 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    600 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    500 V
  • Collector Emitter Voltage
    500 V
  • Continuous Collector Current
    800 mA
  • DC Current Gain
    5 to 30
  • Gain Bandwidth Product
    5 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    800 mW
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Application
    Power switching applications
  • Note
    Halogen & lead-free

Technical Documents
View details on the manufacturer's website
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