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3DD13003B-C

Bipolar Junction Transistor by SeCoS Corporation (664 more products)
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3DD13003B-C Image

The 3DD13003B-C from SeCoS Corporation is a Bipolar Junction Transistor with Emitter Base Voltage 9 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 100 µA, Collector Base Voltage 700 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for 3DD13003B-C can be seen below.

Product Specifications

Product Details

  • Part Number
    3DD13003B-C
  • Manufacturer
    SeCoS Corporation
  • Description
    400 V, 1500 mA, NPN Small Signal Bipolar Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    9 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    700 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    400 V
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    1500 mA
  • DC Current Gain
    20 to 30
  • Gain Bandwidth Product
    4 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    900 mW
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Application
    Power switching applications
  • Note
    Halogen & lead-free

Technical Documents
View details on the manufacturer's website
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