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SFT4100M

Bipolar Junction Transistor by Solid State Devices (262 more products)
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SFT4100M Image

The SFT4100M from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 1.12 to 2 V, Emitter Cut off Current 1000 µA, Collector Base Voltage 250 V, Collector Cut off Current 5000 µA. Tags: Through Hole, NPN Transistor. More details for SFT4100M can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT4100M
  • Manufacturer
    Solid State Devices
  • Description
    250 V, 15 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    1.12 to 2 V
  • Emitter Cut off Current
    1000 µA
  • Collector Base Voltage
    250 V
  • Collector Cut off Current
    5000 µA
  • Collector Emitter Breakdown Voltage
    165 to 200 V
  • Collector Emitter Voltage
    165 V
  • Continuous Collector Current
    15 A
  • DC Current Gain
    8 to 45
  • Gain Bandwidth Product
    20 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    120 W
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-254

Technical Documents
View details on the manufacturer's website
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