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SPT5008S1

Bipolar Junction Transistor by Solid State Devices (262 more products)
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SPT5008S1 Image

The SPT5008S1 from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.8 to 2.2 V, Emitter Cut off Current 1 mA, Collector Base Voltage 100 V, Collector Cut off Current 1 mA. Tags: Surface Mount, NPN Transistor. More details for SPT5008S1 can be seen below.

Product Specifications

Product Details

  • Part Number
    SPT5008S1
  • Manufacturer
    Solid State Devices
  • Description
    100 V, 10 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.8 to 2.2 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    1 mA
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    10 A
  • DC Current Gain
    20 to 200
  • Gain Bandwidth Product
    40 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    100 W
  • Output Capacitance
    275 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SMD1

Technical Documents
View details on the manufacturer's website
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