LLDB4

Note : Your request will be directed to JGD Semiconductor.

LLDB4 Image

The LLDB4 from JGD Semiconductor is a Silicon Bidirectional Trigger Diode that is intended for use in thyristor phase control, circuits for lamp dimming, universal motor speed control, and heat control applications. It has a breakover voltage of over 35 V and a breakover current of up to 50 µA. This RoHS-compliant diac has a power dissipation of less than 150 mW. It is available in a surface-mount package that measures 3.40 x 1.40 mm.

Product Specifications

Product Details

  • Part Number
    LLDB4
  • Manufacturer
    JGD Semiconductor
  • Description
    35 V Silicon Bidirectional Trigger Diode for Heat Control Applications

General

  • Breakover Voltage
    35 V
  • Breakover Current
    50 µA
  • Temperature Operating Range
    -40 to 125 Degree C
  • RoHS Compliant
    Yes
  • Industry
    Industrial, Commercial
  • Applications
    Thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls
  • Dimension
    3.40 x 1.40 mm
  • Package
    LL-34(MiniMELF)
  • Package Type
    Surface Mount
  • Note
    Power Dissipation(PD) :- 150 mW, Output Voltage(Vo) :- 5 V, Leakage Current(IB) :- 10 µA

Technical Documents