The CGD65A055S2 from Cambridge GaN Devices is an Enhancement Mode GaN-on-Si Power Transistor that is designed to exploit the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronic applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 77 mΩ. This transistor has a continuous drain current of up to 27 A. It is based on CGD’s ICeGaN gate technology that enables compatibility with virtually all available gate drivers and controller chips.

This GaN-on-Si transistor consists of a built-in current sense function that eliminates the need for a separate current sensing resistor and its associated efficiency losses. It can be directly soldered to the large copper area of the ground plane, thereby improving the thermal performance and simplifying the thermal design. The power transistor is available in a surface-mount package that measures 8 x 8 mm and is ideal for data centers, gaming PSUs, PC power, LED drivers, high-power Class D audio, PV inverters, AC/DC and DC/DC converters, AC inverters, totem pole PFC, single-switch PFC, server power, converters in single-switch and half-bridge topologies, and general purpose SMPS applications.