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EPC2019

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2019 Image

The EPC2019 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 36 to 50 milli-ohm, Continous Drain Current 8.5 A, Pulsed Drain Current 42 A. Tags: Die. More details for EPC2019 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2019
  • Manufacturer
    Efficient Power Conversion
  • Description
    200 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    36 to 50 milli-ohm
  • Continous Drain Current
    8.5 A
  • Pulsed Drain Current
    42 A
  • Total Charge
    1.8 to 2.5 nC
  • Input Capacitance
    200 to 270 pF
  • Output Capacitance
    110 to 150 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High Speed DC-DC conversion, Class-D Audio, High Frequency Hard-Switching and Soft-Switching Circuits
  • Dimensions
    2.77 x 0.95 mm

Technical Documents
View details on the manufacturer's website
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