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EPC2023

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2023 Image

The EPC2023 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 30 V, Drain Source Resistance 1.15 to 1.45 milli-ohm, Continous Drain Current 90 A, Pulsed Drain Current 590 A. Tags: Die. More details for EPC2023 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2023
  • Manufacturer
    Efficient Power Conversion
  • Description
    30 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    30 V
  • Drain Source Resistance
    1.15 to 1.45 milli-ohm
  • Continous Drain Current
    90 A
  • Pulsed Drain Current
    590 A
  • Total Charge
    19 to 25 nC
  • Input Capacitance
    2150 to 2600 pF
  • Output Capacitance
    1530 to 2300 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High Frequency DC-DC Conversion, Point-of-Load (POL) Converters, Motor Drive, Industrial Automation
  • Dimensions
    6.05 x 2.3 mm

Technical Documents
View details on the manufacturer's website
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