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EPC2035

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2035 Image

The EPC2035 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 60 V, Drain Source Resistance 35 to 45 milli-ohm, Continous Drain Current 1.7 A, Pulsed Drain Current 24 A. Tags: Die. More details for EPC2035 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2035
  • Manufacturer
    Efficient Power Conversion
  • Description
    60 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    60 V
  • Drain Source Resistance
    35 to 45 milli-ohm
  • Continous Drain Current
    1.7 A
  • Pulsed Drain Current
    24 A
  • Total Charge
    880 to 1150 nC
  • Input Capacitance
    95 to 115 pF
  • Output Capacitance
    60 to 90 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    High Speed DC-DC conversion, Wireless Power Transfer, High Frequency Hard-Switching and Soft switching circuits, Lidar/Pulsed Power Applications
  • Dimensions
    0.9 x 0.9 mm

Technical Documents
View details on the manufacturer's website
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