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EPC2102

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2102 Image

The EPC2102 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 60 V, Drain Source Resistance 3.6 to 4.9 milli-ohm, Continous Drain Current 30 A, Pulsed Drain Current 220 A. Tags: Die. More details for EPC2102 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2102
  • Manufacturer
    Efficient Power Conversion
  • Description
    60 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Half Bridge
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    60 V
  • Drain Source Resistance
    3.6 to 4.9 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    220 A
  • Total Charge
    8 to 11 nC
  • Input Capacitance
    850 to 1020 pF
  • Output Capacitance
    500 to 915 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    High Frequency DC-DC
  • Dimensions
    6.05 x 2.3 mm

Technical Documents
View details on the manufacturer's website
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