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EPC2203

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2203 Image

The EPC2203 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 80 V, Drain Source Resistance 53 to 80 milli-ohm, Continous Drain Current 1.7 A, Pulsed Drain Current 17 A. Tags: Die. More details for EPC2203 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2203
  • Manufacturer
    Efficient Power Conversion
  • Description
    80 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    80 V
  • Drain Source Resistance
    53 to 80 milli-ohm
  • Continous Drain Current
    1.7 A
  • Pulsed Drain Current
    17 A
  • Total Charge
    670 to 830 nC
  • Input Capacitance
    73 to 88 pF
  • Output Capacitance
    47 to 71 pF
  • Temperature operating range
    -40 to +150 °C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    Lidar/pulsed power applications, High power density DC-DC Converters, Wireless power transfer, Class-D Audio
  • Dimensions
    0.9 x 0.9 mm

Technical Documents
View details on the manufacturer's website
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