1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Efficient Power Conversion
  6. EPC2219

EPC2219

GaN Power Transistor by Efficient Power Conversion (95 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Efficient Power Conversion.

EPC2219 Image

The EPC2219 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 65 V, Drain Source Resistance 1700 to 3300 milli-ohm, Continous Drain Current 0.5 A, Pulsed Drain Current 0.5 A. Tags: Die. More details for EPC2219 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    EPC2219
  • Manufacturer
    Efficient Power Conversion
  • Description
    65 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    65 V
  • Drain Source Resistance
    1700 to 3300 milli-ohm
  • Continous Drain Current
    0.5 A
  • Pulsed Drain Current
    0.5 A
  • Total Charge
    49 to 64 nC
  • Input Capacitance
    7 to 10 pF
  • Output Capacitance
    2 to 3 pF
  • Temperature operating range
    -40 to +150 °C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    Lidar/pulsed power applications, High speed gate driving, Wireless power transfer, Synchronous bootstrap, Class-D Audio
  • Dimensions
    0.9 x 0.9 mm

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products