The EPC2306 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that has a drain-to-source voltage of over 100 V, a gate threshold voltage of 1.3 V, and a drain-source on-resistance of 3 mΩ. It has a continuous drain current of up to 48 A and a pulsed drain current of less than 197 A. The transistor offers exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain to source resistance.  It consists of a lateral structure that provides a low total gate charge and integrates a majority charge carrier diode that ensures zero reverse recovery charge.

This RoHS-compliant power transistor is available in a surface mount package that measures 3 x 5 mm and is ideal for AC-DC chargers, SMPS, adaptors, power supplies, high-frequency DC-DC conversion up to 80 V input (buck, boost, buck-boost, and LLC), 24 V - 60 V motor drives, high power density DC-DC modules from 40 V - 60 V to 5 V - 12 V, synchronous rectification and solar MPPT applications.