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EPC8002

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC8002 Image

The EPC8002 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 65 V, Drain Source Resistance 380 to 480 milli-ohm, Continous Drain Current 2 A, Pulsed Drain Current 2 A. Tags: Die. More details for EPC8002 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC8002
  • Manufacturer
    Efficient Power Conversion
  • Description
    65 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    65 V
  • Drain Source Resistance
    380 to 480 milli-ohm
  • Continous Drain Current
    2 A
  • Pulsed Drain Current
    2 A
  • Total Charge
    133 to 167 nC
  • Input Capacitance
    20 to 24 pF
  • Output Capacitance
    6.7 to 10 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    Ultra High Speed DC-DC Conversion, RF Envelope Tracking, Wireless Power Transfer, Game Console and Industrial Movement Sensing (Lidar)
  • Dimensions
    2.1 x 0.85 mm

Technical Documents
View details on the manufacturer's website
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