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EPC8010

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC8010 Image

The EPC8010 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 1.4 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 120 to 160 milli-ohm, Continous Drain Current 4 A, Pulsed Drain Current 7.5 A. Tags: Die. More details for EPC8010 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC8010
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.4 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    120 to 160 milli-ohm
  • Continous Drain Current
    4 A
  • Pulsed Drain Current
    7.5 A
  • Total Charge
    360 to 480 nC
  • Input Capacitance
    43 to 55 pF
  • Output Capacitance
    25 to 36 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    Ultra High Speed DC-DC Conversion, RF Envelope Tracking, Wireless Power Transfer, Game Console and Industrial Movement Sensing (LiDAR)
  • Dimensions
    2.1 x 0.85 mm

Technical Documents
View details on the manufacturer's website
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