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INN150EQ070A

GaN Power Transistor by Innoscience (83 more products)
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The INN150EQ070A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.1 V, Drain Source Voltage 150 V, Drain Source Resistance 5.4 to 7 milli-ohm, Continous Drain Current 60 A, Pulsed Drain Current 160 A. Tags: Surface Mount. More details for INN150EQ070A can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN150EQ070A
  • Manufacturer
    Innoscience
  • Description
    150 V, 5.4 to 7 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.1 V
  • Drain Source Voltage
    150 V
  • Drain Source Resistance
    5.4 to 7 milli-ohm
  • Continous Drain Current
    60 A
  • Pulsed Drain Current
    160 A
  • Total Charge
    13 nC
  • Input Capacitance
    1450 pF
  • Output Capacitance
    525 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    En-FCQFN
  • Applications
    High frequency DC-DC converter, Solar Systems optimizers and microinverters, PD Charger and PSU Synchronous Rectification, Telecom Power Supply, Motor driver
  • Dimensions
    4 x 6 mm

Technical Documents
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