The INN650D190A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for DCM/BCM PFC, AHB/LLC/QR flyback/ACF DCDC converter, LED driver, fast battery charger, notebook/AIO adaptor and desktop PC/ATX/TV/power tool power supply applications. This JEDEC-qualified GaN transistor has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 190 milli-ohms. It has a continuous drain current of up to 11.5 A and a pulsed drain current of less than 20.5 A. This REACH-compliant GaN-on-Si transistor is a normally-off power switch that offers a very high switching frequency. It provides zero reverse recovery charge, a low gate charge, and a low output charge. This RoHS-compliant power transistor provides electrostatic discharge (ESD) protection for high reliability in industrial environments. It is available in a surface-mount package that measures 8 x 8 mm.