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ISG6103

GaN Power Transistor by Innoscience (83 more products)
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The ISG6103 from Innoscience is a GaN Power Transistor with Drain Source Voltage -7 to 700 V, Drain Source Resistance 230 to 320 milli-ohm, Continous Drain Current 5 A, Pulsed Drain Current 10 A, Output Capacitance 18.2 pF. Tags: Surface Mount. More details for ISG6103 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISG6103
  • Manufacturer
    Innoscience
  • Description
    -7 to 700 V, 230 to 320 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Drain Source Voltage
    -7 to 700 V
  • Drain Source Resistance
    230 to 320 milli-ohm
  • Continous Drain Current
    5 A
  • Pulsed Drain Current
    10 A
  • Output Capacitance
    18.2 pF
  • Turn-on Delay Time
    25 ns
  • Turn-off Delay Time
    35 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback, ACF, Half Bridge, Full Bridge, PD Adaptor, LED Lighting, Solar Micro Inverter, Server and Telecom Power Supply
  • Dimensions
    6 x 8 mm

Technical Documents
View details on the manufacturer's website
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