1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Navitas Semiconductor
  6. NV6123

NV6123

GaN Power Transistor by Navitas Semiconductor (6 more products)
Request Quote

Note : Your request will be directed to Navitas Semiconductor.

The NV6123 from Navitas Semiconductor is a GaN Power Transistor with Drain Source Voltage 800 V, Drain Source Resistance 300 to 621 milli-ohm, Continous Drain Current 5 A, Pulsed Drain Current 7.5 to 10 A, Total Charge 10 nC. Tags: Surface Mount. More details for NV6123 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NV6123
  • Manufacturer
    Navitas Semiconductor
  • Description
    800 V, 5 A, Single GaN Transistor

General

  • Configuration
    Single
  • Industry
    Industrial
  • Drain Source Voltage
    800 V
  • Drain Source Resistance
    300 to 621 milli-ohm
  • Continous Drain Current
    5 A
  • Pulsed Drain Current
    7.5 to 10 A
  • Total Charge
    10 nC
  • Output Capacitance
    11 pF
  • Turn-on Delay Time
    11 ns
  • Turn-off Delay Time
    9 ns
  • Rise Time
    8 ns
  • Fall Time
    3 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    Buck, boost, half bridge, full bridge, Mobile fast-chargers, adapters
  • Dimensions
    6 x 8 mm
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products