The GAN039-650NBBA from Nexperia is an Automotive Qualified GaN Power Transistor that is ideal for automotive on-board-charger systems, automotive DC-DC, hard and soft switching converters for industrial and datacom power, bridgeless totem-pole PFC, PV and UPS inverters and servo motor drives applications. The transistor has a drain-source breakdown voltage of 650 V, a gate threshold voltage of 4 V, and a drain-source on- resistance of 33 milli-ohms. It has a continuous drain current of 60 A. This transistor is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies that offer superior reliability and performance. It has a simplified driver design that requires 12 V drive voltage and can be used with standard-level MOSFET gate drivers.
This AEC-Q101-qualified transistor has a robust gate oxide and has a high gate threshold voltage for excellent gate bounce immunity. It employs a body diode with low forward voltage and has a low inductance that contributes to its reduced switching losses and EMI in addition to simplified dead-time adjustments. This power transistor offers transient over-voltage capability and provides optimum operation up to 175°C, owing to its increased robustness even in thermally demanding environments. It is available in a surface-mount package that measures 12 x 12 x 2.5 mm.
