The TP65H070G4RS-TR from Transphorm is a GaN Field Effect Transistor that is ideal for datacom, broad industrial, PV inverter, servo motor, and computing applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 85 milli-ohms. This FET has a continuous drain current of up to 29 A and a pulsed drain current of less than 120 A. It uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over Silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. This transistor combines state-of-the-art high-voltage GaN HEMT and low-voltage Silicon MOSFET technologies for superior reliability and performance. It offers an increased power density, reduced system size and weight, and an overall lower system cost, resulting in improved efficiency in both hard and soft-switched circuits. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 9.26 x 10 mm.