The AHV85111KNHTR from Allegro MicroSystems is a Self-Powered Isolated Gate Driver IC that has been optimized to drive GaN FET transistors in multiple applications and topologies. It requires an input voltage of 10.8 - 13.2 V. This gate driver integrates an isolated dual positive/negative output bias supply to eliminate the need for any external gate drive auxiliary bias supplies or high-side bootstraps. It allows the positive bipolar output rails to be adjusted and regulated, which improves dv/dt immunity to greatly simplify the system design, and reduces electromagnetic interference (EMI) through reduced total common-mode (CM) capacitance.

This gate driver IC offers fast propagation delay and high peak source/sink capability to efficiently drive GaN FETs in high-frequency designs. It combines the benefits of high common-mode transient immunity (CMTI) and isolated outputs for both the bias power and drive, making it suitable for systems that require high isolation, optimal level-shifting, or ground separation for noise immunity. This IC also includes under-voltage lockout (UVLO) protection on both the primary and secondary rails to disable the IC when the supply voltage is below the threshold. It is available in a compact surface-mount package that measures 10 x 7.66 x 2.41 mm and is ideal for AC-DC/DC-DC converters, automotive: EV chargers, on-board chargers, industrial: robotics, data centers, and clean energy applications.