The EPC23101 from Efficient Power Conversion is an Integrated Half-Bridge Gate Driver IC. It has an input voltage of 10-80 V. This gate driver uses EPC’s proprietary GaN IC technology to integrate input logic interface, level shifting, bootstrap charging, gate drive buffer, and eGaN output FET circuits. It consists of independent high side and low side control inputs and has a gate driver output to drive the external low side eGaN FET device, thereby configuring a half-bridge power stage. This gate driver utilizes external resistors to tune switching times and control over-voltage spikes to less than +10 V above the rail and -10 V below the ground during hard switching transitions. It uses cross-conduction lockout logic to switch-off both FET devices when the two input signals are high at the same time. This gate driver integrates robust level shifters to avoid false triggers arising from fast dv/dt transients and other external sources or phases.

The EPC23101 also offers under-voltage lockout (UVLO) protection for the high side and low side to keep both FETs off at low supply voltages. This RoHS compliant gate driver is available in a surface-mount package that measures 3.5 x 5 mm and is ideal for the buck, boost, half-bridge, full-bridge or LLC converters, single-phase and three-phase motor drive inverter applications.