The 1EBN1001AE from Infineon Technologies is an Automotive Qualified Single Channel IGBT/MOSFET Gate Drive Booster that has been designed for automotive motor drives above 10 kW. It requires an input voltage of -0.3 V to 28 V. This gate driver has been developed to optimize the design of high-performance safety-relevant automotive systems. It is manufactured using high-performance bipolar technology and aims at replacing buffer stages based on discrete devices. This driver IC integrates an active clamping circuit ACLI that allows an external active clamping circuit to turn ON the IGBT in case of over-voltage conditions detected within the IGBT. It uses a DACLP pin to disable the active clamping function during run-time.
This AEC-Q100-qualified gate driver booster implements additional features to simplify the implementation of Active Short Circuit (ASC) strategies and makes the device suitable for safety-related systems certified up to ASIL D (as per IEC 61508 and ISO 26262). It is available in a surface-mount package and is ideal for inverters for automotive hybrid vehicles (HEV), electric vehicles (EV), high-voltage DC/DC converters, and industrial drive applications.
