The 2ED28073J06F from Infineon Technologies is a Half-Bridge Gate Driver IC that has been designed to drive power MOSFETs, including fast body diode CoolMOS PFD7 super junction MOSFETs and IGBTs. This gate driver IC requires an input voltage of 10 - 20 V. It includes an integrated BS diode, pulse generator, UV detector, pulse filter, VSS/COM level shift, deadtime, shoot-through prevention, and delay circuitries. This gate driver is a high-voltage, high-speed MOSFET and IGBT driver solution with dependent high- and low-side referenced output channels. It consists of proprietary HVIC and latch-immune CMOS technologies resulting in a ruggedized monolithic construction.
This JEDEC-qualified IC has a floating channel that can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operates up to 600 V. It integrates an output driver that incorporates a low di/dt output stage optimized to drive CoolMOS PFD7 in motor drive applications. The RoHS-compliant gate driver IC is available in a surface-mount package that measures 5 x 6.20 x 1.75 mm and is ideal for refrigeration compressors, air conditioner fans, washing machines and dishwasher pumps, general-purpose inverters, micro/mini inverter drives, and driving IGBTs, as well as enhancement mode N-Channel MOSFETs in various motor control applications.
