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2EDS8165H

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The 2EDS8165H from Infineon Technologies is a Gate Driver with Input Voltage 3 to 3.5 V, Output Voltage 4.5 to 20 V, Isolation Voltage 650 V, Output Current 1 A, Rise Time 6.5 ns. Tags: Surface Mount. More details for 2EDS8165H can be seen below.

Product Specifications

Product Details

  • Part Number
    2EDS8165H
  • Manufacturer
    Infineon Technologies
  • Description
    Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing

General

  • Types of Gate Driver
    Dual Channel Gate Driver
  • Technology
    MOSFET, GaN FET
  • Configuration
    Isolated
  • No of Drivers
    Dual
  • Number of Outputs
    Dual
  • Input Voltage
    3 to 3.5 V
  • Output Voltage
    4.5 to 20 V
  • Isolation Voltage
    650 V
  • Output Current
    1 A
  • Rise Time
    6.5 ns
  • Fall Time
    4.5 ns
  • Propagation Delay
    36.5 ns
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Industry
    Industrial
  • Package Type
    Surface Mount
  • Package
    PG-DSO-16
  • Applications
    Server, telecom and industrial SMPS, Synchronous rectification, brick converters, UPS and battery storage, EV charging industry automation, motor drives and power tools

Technical Documents
View details on the manufacturer's website
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