The GD3160 from NXP Semiconductors is a Single-Channel Gate Driver that is designed to drive SiC and IGBT modules for xEV traction inverters, OBC, and DC-DC converters. It requires an input voltage of 4.5-40 V for operation and delivers an output voltage of -12 to 25 V. This isolated gate driver provides integrated galvanic signal isolation of up to 8 kV and has ADC for monitoring parameters from the HV domain. It can be controlled via PWM and SPI interfaces that allow users to optimize conditions for driving and protecting. 

This AEC-Q100 qualified gate driver supports high switching frequencies of up to 100 kHz. It can drive SiC MOSFETs and IGBTs gates directly and provide high-performance switching, low dynamic on-resistance, and rail-to-rail gate voltage control. It is available in a surface-mount package that measures 8 x 13 mm and is ideal for battery management systems, hybrid electric vehicles, motor drives, and EV power inverter applications.