The NCP5304DR2G from onsemi is a Dual Channel Half-Bridge Gate Driver that is designed to directly drive two N-channel power MOSFETs or IGBTs in a half-bridge configuration. This gate driver requires a supply voltage of 10-20 V. It utilizes a bootstrap technique to ensure proper driving of the high-side power switch and operates with two independent inputs that feature cross-conduction protection. This gate driver can handle high voltages of up to 600 V and offers compatibility with both 3.3 V and 5 V logic levels. It has matched propagation delays for both channels and provides a source current of 250 mA and a sink current of 500 mA for synchronized and efficient switching. This RoHS-compliant gate driver includes an internal fixed dead time to prevent cross-conduction and incorporates Under-Voltage Lockout (UVLO) protection for both channels to prevent low-voltage malfunctions. It is available in a surface-mount package that measures 5.80 x 4.80 x 1.35 mm and is suitable for half-bridge and full-bridge power converter applications.