TD99102

Note : Your request will be directed to Teledyne e2v HiRel Electronics.

TD99102 Image

The TD99102 from Teledyne e2v HiRel Electronics is a GaN Transistor Gate Driver that is designed to control the gates of external power devices such as GaN, HEMT, and power MOSFET. It requires an input voltage of 4-6.5 V for operation and provides switching transition speeds in the subnanosecond range for supporting switching applications of up to 20 MHz.  This gate driver is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. The dead-time controller allows the timing of the LS and HS gates to eliminate any large shoot-through currents that could dramatically reduce the efficiency of the circuit and potentially damage the transistors.

The TD99102 is manufactured using Peregrine’s UltraCMOS process, a patented advanced form of silicon-on-insulator (SOI) technology, offering the performance of GaAs with the economy and integration of conventional CMOS. It is available as a bumped flip chip die and is ideal for dc-dc conversions, ac-dc conversions, motor driver, and orbital point of load (POL) module power distribution applications.

Product Specifications

Product Details

  • Part Number
    TD99102
  • Manufacturer
    Teledyne e2v HiRel Electronics
  • Description
    GaN Transistor Gate Driver for Power Supply Applications

General

  • Types of Gate Driver
    GaN FET Driver
  • Technology
    GaN FET
  • Configuration
    Non-Isolated
  • Input Voltage
    4 to 6.5 V
  • Rise Time
    3 to 10 ns
  • Fall Time
    4 to 10 ns
  • Temperature operating range
    -40 to 105 degree C
  • Package Type
    Die
  • Package
    DIE
  • Applications
    Orbital Point of Load (POL) module power distribution, DC-DC Converters, AC-DC Power Supplies, Motor Driver

Technical Documents