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AOBS30B65LN

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The AOBS30B65LN from Alpha & Omega Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.86 to 2.58 V, DC Collector Current 30 to 60 A, Peak Collector Current 90 A, Junction Temperature -55 to 175 Degree C. More details for AOBS30B65LN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOBS30B65LN
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    650 V, Single Switch IGBT

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.86 to 2.58 V
  • DC Collector Current
    30 to 60 A
  • Peak Collector Current
    90 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    114 to 227 W
  • Package
    TO-263 D2PAK
  • Package Type
    Surface Mount
  • Industry
    Automotive, Industrial, Commercial
  • Applications
    Discharge switch, Relay replacement, PTC heater
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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