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BIDNW30N60H3

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BIDNW30N60H3 Image

The BIDNW30N60H3 from Bourns is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 2 V, DC Collector Current 30 to 60 A, DC Forward Current 12 A, Junction Temperature -55 to 150 Degree C. More details for BIDNW30N60H3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BIDNW30N60H3
  • Manufacturer
    Bourns
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2 V
  • DC Collector Current
    30 to 60 A
  • DC Forward Current
    12 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    230 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Industry
    Commercial, Industrial
  • Applications
    Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), Power Factor Correction (PFC), Induction heating
  • RoHS Compliant
    Yes

Technical Documents
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