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BIDW50N65T

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BIDW50N65T Image

The BIDW50N65T from Bourns is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 2.2 V, DC Collector Current 50 to 100 A, DC Forward Current 50 A, Junction Temperature -55 to 150 Degree C. More details for BIDW50N65T can be seen below.

Product Specifications

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Product Details

  • Part Number
    BIDW50N65T
  • Manufacturer
    Bourns
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 to 2.2 V
  • DC Collector Current
    50 to 100 A
  • DC Forward Current
    50 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    416 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Industry
    Commercial, Industrial
  • Applications
    Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), Power Factor Correction (PFC), Inverters
  • RoHS Compliant
    Yes

Technical Documents
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