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DGTD120T40S1PT

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The DGTD120T40S1PT from Diodes Incorporated is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 3 V, DC Collector Current 40 to 80 A, Gate Emitter Leakage Current 0.25 uA, Operating Temperature -55 to 150 Degree C. More details for DGTD120T40S1PT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DGTD120T40S1PT
  • Manufacturer
    Diodes Incorporated
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 3 V
  • DC Collector Current
    40 to 80 A
  • Gate Emitter Leakage Current
    0.25 uA
  • Operating Temperature
    -55 to 150 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    142 to 357 W
  • Package
    TO 247
  • Package Type
    Through Hole
  • Applications
    Motor Drive, UPS, Welder, Solar Inverter, IH Cooker
  • RoHS Compliant
    Yes

Technical Documents
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