The DIM1200FSM12-A000 from Dynex Semiconductor is a Single Switch N-channel Enhancement Mode IGBT module that is ideal for high-reliability inverters, motor controllers, and traction drives applications. It has a collector-to-emitter voltage of up to 1200 V and a saturated collector-to-emitter voltage of 2.2 V. This IGBT has a DC collector current of less than 1200 A. It has a large reverse bias safe operating area (RBSOA) and can withstand short-circuit current up to 10 µs, making it ideal for traction drives and other systems that demand high thermal cycling capability. This single-switch IGBT has an electrically separated base plate and a low inductance design, thereby allowing circuit designers to optimize circuit topologies. It also provides a grounded heat sink to ensure the safety of operation. This IGBT module is available in a chassis-mount package that measures 130 x 140 x 38 mm.