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DIM1200NSM12-A000

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The DIM1200NSM12-A000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2.2 to 3.2 V, DC Collector Current 1200 A, Peak Collector Current 2400 A, DC Forward Current 1200 A. More details for DIM1200NSM12-A000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM1200NSM12-A000
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    2.2 to 3.2 V
  • DC Collector Current
    1200 A
  • Peak Collector Current
    2400 A
  • DC Forward Current
    1200 A
  • Gate Emitter Leakage Current
    6 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    10400 W
  • Package Type
    Chassis Mount
  • Applications
    High Reliability Inverters, Motor Controllers, Traction Drives

Technical Documents
View details on the manufacturer's website
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