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DIM1200NSM17-A000

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The DIM1200NSM17-A000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.7 to 4 V, DC Collector Current 1200 A, Peak Collector Current 2400 A, DC Forward Current 1200 A. More details for DIM1200NSM17-A000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM1200NSM17-A000
  • Manufacturer
    Dynex Semiconductor
  • Description
    1700 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.7 to 4 V
  • DC Collector Current
    1200 A
  • Peak Collector Current
    2400 A
  • DC Forward Current
    1200 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    6 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    10400 W
  • Package Type
    Module
  • Applications
    High Reliability Inverters, Motor Controllers, Traction Drives

Technical Documents
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