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DIM1800ESS12-A000

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The DIM1800ESS12-A000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2.2 to 3.3 V, DC Collector Current 1800 A, Peak Collector Current 3600 A, DC Forward Current 1800 A. More details for DIM1800ESS12-A000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM1800ESS12-A000
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    2.2 to 3.3 V
  • DC Collector Current
    1800 A
  • Peak Collector Current
    3600 A
  • DC Forward Current
    1800 A
  • Gate Emitter Leakage Current
    12 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    15625 W
  • Package Type
    Chassis Mount
  • Applications
    Motor Controllers, Traction Drives

Technical Documents
View details on the manufacturer's website
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