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DIM200PHM33-F

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The DIM200PHM33-F from Dynex Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.8 to 3.6 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for DIM200PHM33-F can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM200PHM33-F
  • Manufacturer
    Dynex Semiconductor
  • Description
    3300 V, Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.8 to 3.6 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    3300 V
  • Power Dissipation
    2600 W
  • Package Type
    Module
  • Applications
    High Reliability Inverters, Motor Controllers, Traction Auxiliaries

Technical Documents
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