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DIM250XCM65-TS000

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DIM250XCM65-TS000 Image

The DIM250XCM65-TS000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 to 4 V, DC Collector Current 250 A, Peak Collector Current 500 A, DC Forward Current 250 A. More details for DIM250XCM65-TS000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM250XCM65-TS000
  • Manufacturer
    Dynex Semiconductor
  • Description
    6500 V, Chopper IGBT Module

General

  • Types
    Chopper IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3 to 4 V
  • DC Collector Current
    250 A
  • Peak Collector Current
    500 A
  • DC Forward Current
    250 A
  • Peak Forward Current
    500 A
  • Junction Temperature
    125 Degree C
  • Gate Emitter Leakage Current
    1uA
  • Collector Emitter Voltage
    6500 V
  • Power Dissipation
    3300 W
  • Package Type
    Module
  • Applications
    High Reliability Inverters, Motor Controllers, Traction drives

Technical Documents
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