1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Dynex Semiconductor
  6. DIM450M1HS12-PB500

DIM450M1HS12-PB500

Download Datasheet Request Quote

Note : Your request will be directed to Dynex Semiconductor.

DIM450M1HS12-PB500 Image

The DIM450M1HS12-PB500 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.65 V, DC Collector Current 450 A, Peak Collector Current 900 A, DC Forward Current 450 A. More details for DIM450M1HS12-PB500 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DIM450M1HS12-PB500
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • Dimensions
    152 x 62 mm
  • Saturated Collector Emitter Voltage
    1.65 V
  • DC Collector Current
    450 A
  • Peak Collector Current
    900 A
  • DC Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.5 µA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    2.8 kW
  • Package
    M1
  • Package Type
    Module
  • Applications
    Motor drives, power changing equipment, EV, inverters, renewable energy power conversion
  • Surge Current
    1900 A

Technical Documents
View similar products

Latest IGBTs

View more products