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DIM450M1HS17-PA500

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DIM450M1HS17-PA500 Image

The DIM450M1HS17-PA500 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.8 to 2.6 V, DC Collector Current 450 A, Peak Collector Current 900 A, DC Forward Current 450 A. More details for DIM450M1HS17-PA500 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM450M1HS17-PA500
  • Manufacturer
    Dynex Semiconductor
  • Description
    1700 V ,Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.6 V
  • DC Collector Current
    450 A
  • Peak Collector Current
    900 A
  • DC Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.5 uA
  • Operating Temperature
    -40 to 150 Degree C
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    2270 W
  • Package Type
    Chassis Mount
  • Applications
    Motor Drives, Power Charging Equipment, Reactive Compensation, High Reliability Inverters

Technical Documents
View details on the manufacturer's website
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